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| CTD100, CDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values 15 1.74 0.85 3.2 VD=6V; VD=6V; TVJ=TVJM; TVJ=TVJM; o Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Creepage distance in air Maximum allowable acceleration TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM VD=2/3VDRM o IT, IF=300A; TVJ=25 C For power-loss calculations only (TVJ=TVJM) o 1.5 1.6 100 200 0.25 10 200 150 2 typ. 185 170 45 0.22 0.11 0.42 0.21 12.7 9.6 50 TVJ=25 C; tp=30us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=6A/us o FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Gate-cathode twin pins for version 1 APPLICATIONS * DC motor control * Softstart AC motor controller * Light, heat and temperature control ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits DEECorp. CTD100, CDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature 10 1: IGT, TVJ = 125o C V VG 2: IGT, TVJ = 25oC 3: IGT, TVJ = -40oC 3 1 1 4 2 5 6 4: PGAV = 0.5 W IGD, TVJ = 125o C 0.1 100 101 102 5: PGM = 5W 6: PGM = 10 W 103 IG mA 104 Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 4 Gate trigger characteristics 1000 TVJ = 25oC s tgd typ. 100 Limit 10 3 x CTD/CDT100 1 10 100 IG mA 1000 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Gate trigger delay time DEECorp. CTD100, CDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 3 x CTD/CDT100 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.22 0.23 0.25 0.27 0.28 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0066 0.0678 0.1456 ti (s) 0.0019 0.0477 0.344 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.42 0.43 0.45 0.47 0.48 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0066 0.0678 0.1456 0.2 ti (s) 0.0019 0.0477 0.344 1.32 DEECorp. |
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